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Triode/MOS Tube/Transistor
(6281)
A Triode/MOS Tube/Transistor is a semiconductor device that controls the current in electronic products. Which can be used in a wide range of applications such as amplifiers, switches, or sensors. JLCPCB offers a wide range of high-quality Triode/MOS Tube/Transistor devices for PCB assembly from industry-leading manufacturers including Infineon Technologies, Vishay Intertech, Nexperia, Texas Instruments and more.
- Manufacturer
- (DIOTEC)
- A Power microelectronics
- AF
- Agertech
- Allegro MicroSystems, LLC
- ALLPOWER(ShenZhen Quan Li Semiconductor)
- Alpha & Omega Semicon
- Analog Devices
- AnBon
- ARK micro
- Ascend
- ASDsemi
- Axelite Tech
- BASiC Semiconductor
- BPS(Bright Power Semicon)
- Brightking
- CASS
- CET(Chino-Excel Tech)
- Cheng Xin Wei Tech
- ChipLink Tech
- PackageType
- 1206A-03
- AlphaDFN-10(2.98x1.49)
- APMCA-A16
- APMCA-B16
- CPC-8
- CPH-3
- CSP(1.33x1.33)
- D2PAK
- D2PAK(TO-263)
- D2PAK-7
- DFN(1x0.6)
- DFN(2x2)
- DFN(2x5)
- DFN(3.3x3.3)
- DFN(3x3)
- DFN(5x6)
- DFN(8x8)
- DFN-12-EP(4x4)
- DFN-16(5x6)
- DFN-3(1.1x1)
- Average Gate Power Dissipation (PG(AV))
- 1W
- 2W
- Collector Current (Ic)
- null
- 20mA
- 25mA
- 30mA
- 45mA
- 50mA
- 70mA
- 100mA
- 150mA
- 200mA
- 250mA
- 300mA
- 500mA
- 600mA
- 700mA
- 800mA
- 1A
- 1.5A
- 1.8A
- 2A
- Collector Cut-Off Current (Icbo)
- 100pA
- 10nA
- 15nA
- 20nA
- 30nA
- 50nA
- 100nA
- 200nA
- 250nA
- 400nA
- 500nA
- 1uA
- 2uA
- 5uA
- 10uA
- 30uA
- 100uA
- 200uA
- 1mA
- 2mA
- Collector Cut-Off Current (Ices@Vce)
- 1uA@600V
- 10uA@650V
- 100uA@650V
- 250uA
- 1mA@1.2kV
- 1mA@1200V
- Collector cut-off current (Icbo@Vcb)
- 100nA
- 10uA
- 100uA@100V
- 200uA@100V
- 1mA
- Collector-Emitter Breakdown Voltage (Vceo)
- null
- null;60V
- 4.7V
- 6V
- 10V
- 12V
- 15V
- 20V
- 25V
- 27V
- 30V
- 32V
- 35V
- 40V
- 45V
- 50V
- 52V
- 55V
- 60V
- 65V
- Collector-Emitter Breakdown Voltage (Vces)
- 500V
- 600V
- 650V
- 1.2kV
- 1200V
- 1350V
- 1700V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)
- 50mV@100mA,1mA
- 60mV@100mA,10mA
- 72mV@2A,200mA
- 90mV@1A,50mA
- 90mV@4A,400mA
- 90mV@50mA,5mA
- 100mV@0.25mA,5mA
- 100mV@100mA,10mA
- 100mV@10mA,0.5mA
- 100mV@10mA,500uA
- 100mV@1A,100mA
- 100mV@2.5mA,50mA
- 100mV@3A,30mA
- 100mV@50mA,2.5mA
- 100mV@5mA,0.25mA
- 100mV@5mA,250uA
- 110mV@1A,100mA
- 110mV@200mA,10mA
- 110mV@4A,400mA
- 120mV@400mA,20mA
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge)
- 1.65V@50A,15V
- 1.9V@100A,15V
- 1.9V@40A,15V
- 2V@15A,15V
- 2V@25A,15V
- 2.24V@25A,15V
- Collector-emitter saturation voltage (VCE(sat)@Ic,Ib)
- 1.5V@100mA,100uA
- 2V@2A,2mA
- 3V@1.2mA,120mA
- 3V@20A,200mA
- 3V@5A,20mA
- 4V@5A,20mA
- Collector-emitter voltage (Vceo)
- 30V
- 100V
- 120V
- Continuous Drain Current (Id)
- null
- 20mA
- 100mA
- 115mA
- 130mA
- 200mA
- 210mA
- 220mA
- 235mA
- 250mA
- 265mA
- 270mA
- 280mA
- 295mA
- 300mA
- 320mA
- 340mA
- 350mA
- 360mA
- 400mA
- DC Current Gain (hFE@Ic,Vce)
- 100@100mA,1V
- 100@100mA,5V
- 100@10mA,10V
- 100@10mA,1V
- 100@10mA,5V
- 100@150mA,10V
- 100@150mA,1V
- 100@150mA,2V
- 100@1mA,5V
- 100@2A,2V
- 100@2mA,5V
- 100@500mA,1V
- 100@500mA,2V
- 100@50mA,5V
- 100@5A,500mV
- 100@5mA,5V
- 100@600mA,2V
- 10@2A,5V
- 10@3A,5V
- 110@2mA,5V
- DC current gain (hFE@Vce,Ic)
- 10000@5V,100mA
- 1000@3V,3A
- 1000@3V,500mA
- 1500@120mA,10V
- 3000@5V,1A
- 750@3V,10A
- Diode Forward Voltage (Vf@If)
- 960mV@8A
- 1.45V@30A
- 1.7V@20A
- 1.95V@48A
- 2.25V@100A
- Diode Reverse Recovery Time (Trr)
- 1.08us
- 100ns
- 105ns
- 115ns
- 120ns
- 130ns
- 131.5ns
- 136ns
- 140ns
- 166ns
- 205ns
- 31ns
- 34.6ns
- 348ns
- 350ns
- 430ns
- 51ns
- 54ns
- 60ns
- 68ns
- Drain Source On Resistance (RDS(on)@Vgs,Id)
- 0.021mΩ@10V,56A
- 0.44mΩ@10V,46A
- 0.52mΩ@10V,30A
- 0.52mΩ@10V,50A
- 0.55mΩ@10V,50A
- 0.62mΩ@10V,20A
- 0.64mΩ@10V,50A
- 0.65mΩ@10V,50A
- 0.7mΩ@10V,160A
- 0.7mΩ@10V,50A
- 0.71mΩ@10V,20A
- 0.72mΩ@10V,30A
- 0.73mΩ@10V,25A
- 0.75mΩ@10V,80A
- 0.76mΩ@10V,50A
- 0.8mΩ@10V,50A
- 0.82mΩ@50A,10V
- 0.9mΩ@10V,50A
- 0.9mΩ@25A,10V
- 0.92mΩ@10V,50A
- Drain Source Voltage (Vdss)
- null
- 12V
- 15V
- 16V
- 18V
- 19V
- 20V
- 24V
- 25V
- 26V
- 30V
- 35V
- 36V
- 40V
- 45V
- 50V
- 55V
- 60V
- 63V
- 65V
- Gate Threshold Voltage (Vgs(th)@Id)
- 450mV@250uA
- 500mV@250uA
- 0.54V@250uA
- 0.6V@250uA
- 600mV@250uA
- 610mV@250uA
- 0.65V@250uA
- 0.67V@250uA
- 0.68V@250uA
- 690mV@250uA
- 0.7V@250uA
- 700mV@250uA
- 750mV@250uA
- 780mV@250uA
- 800mV@250uA
- 850mV@250uA
- 0.9V@250uA
- 900mV 250uA
- 900mV@250uA
- 900mV@400uA
- Gate Trigger Voltage (Vgt)
- 1.3V
- 1.5V
- Gate Trigger Current(Igt)
- 5mA
- 10mA
- 50mA
- Gate-Emitter Threshold Voltage (Vge(th)@Ic)
- 1.8V@15V,30A
- 1.9V@15V,24A
- 1.9V@15V,35A
- 1.9V@15V,48A
- 2.05V@15V,120A
- 2.14V@15V,48A
- 2.2V@15V,20A
- 2.2V@15V,30A
- 2.3V@15V,40A
- 2.4V@15V,11A
- 2.4V@15V,40A
- 2.4V@15V,60A
- 2.65V@15V,30A
- 5.5V@800uA
- 5.8V@1000uA
- 5.8V@1mA
- 5.8V@480uA
- 6V@34.7mA
- 6.5V@1.4mA
- 6.8V@3.3mA
- Holding Current (Ih)
- 10mA
- 25mA
- 60mA
- Input Capacitance (Cies@Vce)
- 903pF@25V
- 1468pF@25V
- 1.84nF@25V
- 2.77nF@30V
- 3.453nF@25V
- 6.9nF@25V
- Input Capacitance (Ciss@Vds)
- 1.027pF@15V
- 1.317pF@15V
- 1.5pF@25V
- 4.39pF@25V
- 5.2pF@6V
- 12.3pF@25V
- 12.8pF@25V
- 15pF@10V
- 15pF@25V
- 18pF@30V
- 20pF@30V
- 20.2pF@30V
- 21pF@25V
- 23.6pF@10V
- 24pF@10V
- 26pF@20V
- 27pF@25V
- 30pF@25V
- 32.58pF@25V
- 33pF@10V
- Input Resistor
- 1kΩ
- 2.2kΩ
- 4.7kΩ
- 10kΩ
- 22kΩ
- 47kΩ
- 100kΩ
- Input Voltage (VI(off)@Ic,Vce)
- 0.3V@100uA,5V
- 500mV@100uA,5V
- 0.6V@100uA,5V
- 0.65V@100uA,5V
- 0.7V@100uA,5V
- 0.75V@100uA,5V
- 0.8V@100uA,5V
- 0.9V@100uA,5V
- 1V@100uA,5V
- 1.05V@100uA,5V
- 1.1V@100uA,5V
- 1.2V@100uA,5V
- 1.2V@1mA,5V
- 1.7V@100uA,5V
- Input Voltage (VI(on)@Ic,Vce)
- 0.75V@5mA,0.3V
- 0.8V@1mA,0.3V
- 0.8V@20mA,0.3V
- 0.9V@5mA,0.3V
- 1V@20mA,0.3V
- 1.1V@2mA,0.3V
- 1.25V@20mA,0.3V
- 1.4V@20mA,0.3V
- 1.45V@20mA,500mA
- 1.5V@1mA,0.3V
- 1.5V@20mA,0.3V
- 1.6V@1mA,0.3V
- 1.6V@20mA,0.3V
- 1.6V@2mA,0.3V
- 1.7V@5mA,0.3V
- 1.8V@10mA,0.3V
- 1.9V@20mA,0.3V
- 2V@20mA,300mV
- 2.2V@20mA,0.3V
- 2.7V@2mA,0.3V
- Isolation Rating
- 2500Vrms
- Operating Temperature
- +125℃@(Tj)
- +150℃@(Tch)
- +150℃@(Tj)
- +175℃@(Tj)
- +210℃@(Tj)
- -40℃~+125℃@(Tj)
- -40℃~+150℃@(Tj)
- -40℃~+150℃@(Tvjop)
- -40℃~+175℃@(Tj)
- -50℃~+150℃@(Tj)
- -55℃~+150℃
- -55℃~+150℃@(Tj)
- -55℃~+175℃@(Tj)
- -55℃~+185℃@(Tj)
- -55℃~+200℃@(Tj)
- -65℃~+150℃@(Tj)
- -65℃~+175℃@(Tj)
- 150℃
- 40℃~+150℃
- 40℃~+150℃@(Tj)
- Operating temperature
- -40℃~+150℃
- Output Current
- 25A
- Output Voltage
- 1200V
- Output Voltage (VO(on)@Io/Ii)
- 0.3V@10mA,0.5mA
- 300mV@10mA,500uA
- Peak Forward On?State Voltage (Vtm)
- 1.55V
- Peak Repetitive Off?State Voltage (Vdrm)
- 220V
- 600V
- 800V
- 1kV
- Peak non-repetitive surge current (Itsm@f)
- 9A@20ms
- 400A@50Hz
- Power Dissipation (Pd)
- null
- 0.15W
- 150mW
- 160mW
- 180mW
- 200mW
- 225mW
- 246mW
- 250mW
- 280mW
- 285mW
- 0.29W
- 300mW
- 310mW
- 320mW
- 325mW
- 330mW
- 335mW
- 340mW
- 0.35W
- Pulsed Collector Current (Icm)
- 18A
- 20A
- 28A
- 36A
- 45A
- 50A
- 60A
- 72A
- 75A
- 80A
- 90A
- 100A
- 105A
- 120A
- 144A
- 150A
- 160A
- 180A
- 200A
- 240A
- RMS On-State Current(It (rms))
- 800mA
- 12A
- 16A
- 40A
- Resistor Ratio
- 0.47
- 2.1
- 2.13
- 4.5
- 4.55
- 4.7
- 1
- 10
- 21
- Reverse Transfer Capacitance (Crss@Vds)
- 0.4pF@100V
- 0.45pF@400V
- 0.5pF@100V
- 0.6pF@400V
- 0.65pF@100V
- 0.74pF@25V
- 0.75pF@25V
- 0.8pF@100V
- 0.84pF@100V
- 0.84pF@25V
- 0.9pF@100V
- 1pF@100V
- 1pF@25V
- 1.1pF@100V
- 1.2pF@100V
- 1.4pF@50V
- 1.43pF@100V
- 1.47pF@100V
- 1.5pF@100V
- 1.7pF@100V
- SCR Type
- Two-way thyristor
- 双向可控硅
- Switching Frequency
- 20kHz
- Total Gate Charge (Qg@Ic,Vge)
- 1.2uC@25A,15V
- 100nC
- 104nC
- 117nC@25A,15V
- 135nC
- 140nC
- 162nC
- 234nC
- 239nC@40A,15V
- 240nC
- 341nC
- 68nC@15A,15V
- 75nC
- 85nC
- 94nC@50A,15V
- 95nC
- 95nC@48A,15V
- Total Gate Charge (Qg@Vgs)
- 0.3nC@4.5V
- 0.45nC@4.5V
- 0.49nC@30V
- 0.5nC@10V
- 0.5nC@4.5V
- 0.68nC@4.5V
- 0.7nC@10V
- 0.8nC@5V
- 1.1nC@2.5V
- 1.24nC@4.5V
- 1.4nC@4.5V
- 1.55nC@±5V
- 1.5nC@10V
- 1.7nC@10V
- 1.7nC@4.5V
- 1.9nC@10V
- 10.2nC@0~10V
- 10.2nC@5V
- 10.3nC@0~10V
- 10.3nC@0~4.5V
- Transistor Type
- 1 NPN - Pre Biased
- 1 NPN - Pre-Biased,1 PNP - Pre-Biased
- 1PCSNPN&1PCSPNP
- 2 NPN
- 2 NPN - Pre-Biased
- 2 PNP - Pre-Biased
- 2PCSNPN(Dual)
- 2PCSPNP
- 2PCSPNP(Dual)
- NPN
- NPN (Triple Diffused Planar Silicon Transistor)
- One PNP - Pre-Biased
- PNP
- PNP - Darlington
- PNP-预偏置
- Transition Frequency (fT)
- 3MHz
- 4MHz
- 5MHz
- 8MHz
- 10MHz
- 11MHz
- 15MHz
- 20MHz
- 30MHz
- 40MHz
- 50MHz
- 60MHz
- 70MHz
- 75MHz
- 80MHz
- 85MHz
- 90MHz
- 95MHz
- 100MHz
- 105MHz
- Transition frequency (fT)
- 4MHz
- 6MHz
- 125MHz
- 150MHz
- Turn?off Delay Time (Td(off))
- 104ns
- 105ns
- 137ns
- 140ns
- 142ns
- 145ns
- 160ns
- 180ns
- 190ns
- 215ns
- 229ns
- 240ns
- 250ns
- 308ns
- Turn?off Switching Loss (Eoff)
- 0.012mJ
- 0.07mJ
- 0.1mJ
- 0.255mJ
- 0.28mJ
- 0.29mJ
- 0.56mJ
- 0.7mJ
- 0.96mJ
- 1.11mJ
- 1.275mJ
- 1.28mJ
- 1.35mJ
- 1.3mJ
- 1.99mJ
- 10.2mJ
- 2.5mJ
- 2.7mJ
- 3.43mJ
- Turn?on Delay Time (Td(on))
- 20ns
- 23ns
- 30ns
- 34ns
- 36ns
- 40ns
- 41ns
- 42ns
- 46ns
- 55ns
- 60ns
- 65ns
- 80ns
- Turn?on Switching Loss (Eon)
- 0.019mJ
- 0.099mJ
- 0.14mJ
- 0.165mJ
- 0.227mJ
- 0.236mJ
- 0.3mJ
- 0.47mJ
- 0.625mJ
- 0.84mJ
- 0.95mJ
- 1.05mJ
- 1.06mJ
- 1.62mJ
- 1.6mJ
- 1.96mJ
- 3mJ
- 4.1mJ
- 5.75mJ
- 9.5mJ
- Type
- 1PCSN-Channel&1PCSP-Channel
- 1PCSNChannel
- 1PCSNChannel&1PCSPChannel(Half Bridge)
- 1PCSPChannel
- 1个N沟道和1个P沟道
- 2 N-Channel
- 2 N-Channel Common Source
- 2 N-Channel(Half Bridge)
- 2 P-Channel
- 2PCSNChannel(Common Drain)
- 2个N沟道
- 2个N沟道(共漏)
- 2个N沟道(半桥)
- 2个P沟道
- DualN-Channel
- DualP-Channel
- Field Stop
- Gallium nitride(GaN)Power transistor
- IGBT
- IGBT Modules
Quantity
-
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