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  • Bipolar Transistors - BJT

    (690)
  • Manufacturer
    • AF
    • Analog Devices
    • AnBon
    • Diodes Incorporated
    • Doeshare
    • DOWO
    • FeiHong
    • FH (Guangdong Fenghua Advanced Tech)
    • FMS(Formosa Microsemi)
    • Foshan Blue Rocket Elec
    • Galaxy
    • GP(GreenPower)
    • Guangdong Hottech
    • HT(Shenzhen Jinyu Semicon)
    • Infineon Technologies
    • JD
    • JF
    • Jiangsu Changjing Electronics Technology Co., Ltd.
    • Jilin Sino-Microelectronics
    • KEC Semicon
  • PackageType
    • 1206A-03
    • CPH-3
    • D2PAK
    • D2PAK(TO-263)
    • DFN(1x0.6)
    • DFN-3(1.1x1)
    • DFN-3(1.4x1.1)
    • DFN-3(1x0.6)
    • DFN-3(1x1)
    • DFN-3(2x2)
    • DFN-6(1.3x1)
    • DFN-6-EP(1.4x1.2)
    • DFN-8-EP(2x3)
    • DFN1010-3
    • DFN2020D-3
    • DFN2020D-6
    • DPAK
    • IPAK
    • MCPH-6
    • SC-70
  • Collector Current (Ic)
    • null
    • 25mA
    • 30mA
    • 45mA
    • 50mA
    • 70mA
    • 100mA
    • 150mA
    • 200mA
    • 250mA
    • 300mA
    • 500mA
    • 600mA
    • 700mA
    • 800mA
    • 1A
    • 1.5A
    • 2A
    • 2.5A
    • 2.7A
  • Collector Cut-Off Current (Icbo)
    • 100pA
    • 10nA
    • 15nA
    • 20nA
    • 30nA
    • 50nA
    • 100nA
    • 200nA
    • 250nA
    • 400nA
    • 500nA
    • 1uA
    • 2uA
    • 5uA
    • 10uA
    • 30uA
    • 100uA
    • 200uA
    • 1mA
    • 2mA
  • Collector-Emitter Breakdown Voltage (Vceo)
    • null
    • null;60V
    • 4.7V
    • 6V
    • 10V
    • 12V
    • 15V
    • 20V
    • 25V
    • 27V
    • 30V
    • 32V
    • 35V
    • 40V
    • 45V
    • 50V
    • 52V
    • 55V
    • 60V
    • 65V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)
    • 50mV@100mA,1mA
    • 60mV@100mA,10mA
    • 72mV@2A,200mA
    • 90mV@1A,50mA
    • 90mV@4A,400mA
    • 90mV@50mA,5mA
    • 100mV@100mA,10mA
    • 100mV@1A,100mA
    • 100mV@3A,30mA
    • 110mV@1A,100mA
    • 110mV@200mA,10mA
    • 110mV@4A,400mA
    • 120mV@400mA,20mA
    • 120mV@50mA,5mA
    • 130mV@100mA,5mA
    • 130mV@1A,100mA
    • 130mV@1A,50mA
    • 130mV@500mA,50mA
    • 135mV@1A,100mA
    • 140mV@100mA,20mA
  • DC Current Gain (hFE@Ic,Vce)
    • 100@100mA,1V
    • 100@100mA,5V
    • 100@10mA,10V
    • 100@10mA,1V
    • 100@10mA,5V
    • 100@150mA,10V
    • 100@150mA,1V
    • 100@150mA,2V
    • 100@2A,2V
    • 100@2mA,5V
    • 100@500mA,1V
    • 100@500mA,2V
    • 100@50mA,5V
    • 100@5A,500mV
    • 100@600mA,2V
    • 10@2A,5V
    • 10@3A,5V
    • 110@2mA,5V
    • 11@2A,5V
    • 120@150mA,10V
  • Operating Temperature
    • +150℃@(Tj)
    • +175℃@(Tj)
    • -50℃~+150℃@(Tj)
    • -55℃~+150℃@(Tj)
    • -55℃~+200℃@(Tj)
    • -65℃~+150℃@(Tj)
    • -65℃~+175℃@(Tj)
  • Power Dissipation (Pd)
    • null
    • 150mW
    • 160mW
    • 200mW
    • 225mW
    • 250mW
    • 280mW
    • 300mW
    • 310mW
    • 320mW
    • 325mW
    • 330mW
    • 340mW
    • 350mW
    • 360mW
    • 400mW
    • 420mW
    • 430mW
    • 435mW
    • 440mW
  • Transistor Type
    • 1PCSNPN&1PCSPNP
    • 2 NPN
    • 2PCSNPN(Dual)
    • 2PCSPNP
    • 2PCSPNP(Dual)
    • NPN
    • NPN (Triple Diffused Planar Silicon Transistor)
    • PNP
  • Transition Frequency (fT)
    • 3MHz
    • 4MHz
    • 5MHz
    • 8MHz
    • 10MHz
    • 11MHz
    • 15MHz
    • 20MHz
    • 30MHz
    • 40MHz
    • 50MHz
    • 60MHz
    • 70MHz
    • 75MHz
    • 80MHz
    • 85MHz
    • 90MHz
    • 95MHz
    • 100MHz
    • 105MHz
Results remaining: 690
Quantity
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690 items in total
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